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Gallium Indium Nitride Nanocrystals
VALUE PROPOSITION Gallium Nitride (GaN) nanoparticles exhibit superior electrical conductivity, high electron mobility, and a wide bandgap, making them ideal for enhancing the performance of LEDs, high power electronics, and photovoltaic cells. Their unique characteristics also enable the development of highly sensitive sensors, flexible electronics,...
Published: 7/1/2026   |   Updated: 7/1/2026   |   Inventor(s): Richard Lunt, III, Rebecca Anthony, Alexander Ho, Rajib Mandal
Keywords(s):  
Category(s): Advanced Materials, Chemicals, Materials